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Substrate Bowing | STR Group
http://strgmbh.de/products/epitaxy/substrate-bowing
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. Account for Effect of Substrate Bowing on Thermal Profile of the Wafer in Virtual Reactor. Growth from Melt and Solutions. Designed by Elegant Themes.
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Software for modeling of In segregation and strain relaxation in InGaN
http://strgmbh.de/products/epitaxy/streem-ingan
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. STREEM InGaN – software for modeling of In segregation and strain relaxation in MOVPE growth of InGaN-based active region. Figure 1. V-shaped edge-type dislocation half-loop. 8211; influence of the process parameters on indium incorporation into the quantum wells;. 8211; predictions of the actual composition profile in the active r...
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100 mm Si Czochralski | STR Group
http://strgmbh.de/products/growth-from-melt/si_100_cz
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. 100 mm Si Czochralski growth. Fig 2 Verification of the temperature predictions by comparing the computational results (b) with experimental data obtained at the points shown in (a). 3D grid in the crystallization zone including the melt, crucibles,. And is to be found during the calculation. Silicon growth”,. By three different mo...
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Growth from Melt and Solutions | STR Group
http://strgmbh.de/products/growth-from-melt
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. CGSim package for analysis and optimization of Cz, LEC, VCz, and Bridgman growth of semiconductor and semitransparent crystals. Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. CGSim can be effectively applied to solving the following practical problems:. High-pressure liquid-e...
strgmbh.de
300 mm Si Czochralski | STR Group
http://strgmbh.de/products/growth-from-melt/si_300_cz
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. Crystallization rate distribution over the crystallization front (click to open larger). Temperature distribution in the melt. Distribution of the Oxygen concentration in the melt. 300 mm Czochralski Silicon growth. Computed crystallization front geometries compared to the experimental data. Growth from Melt and Solutions.
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Siemens Process | STR Group
http://strgmbh.de/products/siemens-process
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. PolySim software for modeling of Siemens process. PolySim presentation at SEMICON China 2009. Figure 1. Siemens reactor. The growth simulation includes modeling of numerous physicochemical processes such as turbulent heat and mass transfer, radiative heat transfer, gas-phase and surface chemical reactions, and electrical heating of...
strgmbh.de
CVD SiC | STR Group
http://strgmbh.de/products/epitaxy/cvd-sic
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. Modeling of CVD SiC. Specification of the growth system in VR-CVD SiC. Global Heat Transfer Problem in a System for SiC Crystal Growth. Inductive heating. The computation of the Joule heat sources due to inductive heating is carried out by solving the Maxwell equations. Species Transport in the Reactor. Support of growth from C.
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Software and Consulting | STR Group
http://strgmbh.de/products
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. Software for modeling of growth from melt and solutions. Capabilities include simulation of:. Czohralski silicon growth (examples: 100 mm. Effect of magnetic fields in 400 mm Si),. HEM Sapphire Crystal Growth. Directional Solidification (Casting) of Silicon. Sapphire crystal growth by the Kyropoulos technique. MOVPE of III/Vs;.
strgmbh.de
Kyropoulos Sapphire | STR Group
http://strgmbh.de/products/growth-from-melt/kyropoulos-sapphire
Growth from Melt and Solutions. 100 mm Si Czochralski. 300 mm Si Czochralski. Magnetic Fields in Cz Si. SiLENSe for LEDs and LDs. Blue SQW and MQW LED. New in Device Modeling. Numerical analysis and optimization of sapphire crystal growth by the Kyropoulos technique. Global heat transfer in the reactor. In the semi-transparent crystal including specular reflectivity at the boundaries, internal absorption and scattering. Heat exchange in the furnace. Bottom part of a furnace (see Fig. 1). The aim ...A goo...
