enkris.cn
苏州晶湛半导体有限公司Enkris Semiconductor Inc
http://www.enkris.cn/
Enkris Semiconductor Inc
http://www.enkris.cn/
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苏州晶湛半导体有限公司 | enkris.cn Reviews
https://enkris.cn
Enkris Semiconductor Inc
enkris.cn
苏州晶湛半导体有限公司
http://www.enkris.cn/product.asp?ID=13
Enkris Semiconductor is a startup company focused on green technology using GaN. GaN is a wide-bandgap material which can greatly reduce the electricity loss during power conversion and RF signal generation. Enkris is dedicated to developing and producing high quality GaN epi-wafers for the next generation high efficient power electronic devices and RF devices. Enkris offers GaN-on-Sapphire, GaN-on-SiC and GaN-on-Silicon wafers with varied wafer sizes to its customers.
苏州晶湛半导体有限公司
http://www.enkris.cn/tech.asp
Enkris’s feature technology is large size GaN-on-Si epi-wafers. GaN-on-Si is the key technology to leverage performance and cost. Enkris is able to produce 150mm and 200mm GaN-on-Si epi-wafers with controlled wafer bow, truly crack-free surface morphology, low current collapse, low leakage current and high breakdown voltage. Enkris’ products are suitable for 600V and 1200V applications.
苏州晶湛半导体有限公司
http://www.enkris.cn/careers.asp
Welcome to join us. Title: MOCVD Epitaxial Engineer(2). Position Type: Full Time. Location: Suzhou Industry Park, Jiangsu Province, P. R. China. 1Taking ownership of MOCVD reactors and processes including scheduling, data analysis, layer characterization;. 2leading process-improvement and coordinating process transfers to production;. 3Perform hardware characterization on MOCVD system, directing equipment maintenance, within safety guidelines;. Knowledge of experimental design is a plus.
苏州晶湛半导体有限公司
http://www.enkris.cn/index.asp
Enkris Semiconductor, Inc. Energy is one of the main concerns in our current society. Enkris is dedicated to developing high quality GaN epi-wafers for high efficiency GaN electronics and thus reduce the overall electricity consumption. GaN-based devices can achieve low specific Ron and fast switching/oscillation simultaneously because of its high critical electrical field. Enkris’ wafers have been optimized with extremely low buffer leakage and low buffer traps, which are the key features fo...
苏州晶湛半导体有限公司
http://www.enkris.cn/news.asp
Enkris Semiconductor Demonstrates High Voltage GaN HEMT Structures on 200mm Silicon with AIXTRON Tool. Aachen/Suzhou, July 03, 2014 Chinese semiconductor specialist Enkris Semiconductor, Inc. has successfully demonstrated the manufacture of high voltage Gallium Nitride HEMT (High Electron Mobility Transistor) structures on 200mm Silicon (GaN-on-Si). 1 Per Page 6.
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苏州晶湛半导体有限公司
Enkris Semiconductor, Inc. Energy is one of the main concerns in our current society. Enkris is dedicated to developing high quality GaN epi-wafers for high efficiency GaN electronics and thus reduce the overall electricity consumption. GaN-based devices can achieve low specific Ron and fast switching/oscillation simultaneously because of its high critical electrical field. Enkris’ wafers have been optimized with extremely low buffer leakage and low buffer traps, which are the key features fo...
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