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FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. Join us, enrich your life. FlashSilicon has been focusing on the development of semiconductor Non-Volatile Memory (NVM) fabricated with the CMOS Logic process technology. This new NVM technology is called LGNVM (Logic Gate NVM), which has been fabricated with CMOS logic process on 110nm, 55nm, 40nm nodes and has the features of. Scalable cell devices down to FinFet generations.

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FlashSilicon Inc. 立鴻半導體(股)公司 Home | flashsilicon.com Reviews
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FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. Join us, enrich your life. FlashSilicon has been focusing on the development of semiconductor Non-Volatile Memory (NVM) fabricated with the CMOS Logic process technology. This new NVM technology is called LGNVM (Logic Gate NVM), which has been fabricated with CMOS logic process on 110nm, 55nm, 40nm nodes and has the features of. Scalable cell devices down to FinFet generations.
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FlashSilicon Inc. 立鴻半導體(股)公司 Home | flashsilicon.com Reviews

https://flashsilicon.com

FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. Join us, enrich your life. FlashSilicon has been focusing on the development of semiconductor Non-Volatile Memory (NVM) fabricated with the CMOS Logic process technology. This new NVM technology is called LGNVM (Logic Gate NVM), which has been fabricated with CMOS logic process on 110nm, 55nm, 40nm nodes and has the features of. Scalable cell devices down to FinFet generations.

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1

FlashSilicon Inc. 立鴻半導體(股)公司 SSGLNVM Applications NV-SRAM

http://www.flashsilicon.com/ssglnvm-applications-nv-sram

FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. NV-SRAM is designed to convert one-to-one non-volatile data into static data and vice versa. When the NV-SRAM is in the normal operation with active power the read/write functions of NV-SRAM are the same as those of a conventional SRAM. To initialize the NV-SRAM with chip power on, the integrated SSGLNVM. NV-SRAM (Non-Volatile Static Random Access Memory). 4 F2 NOR-Type Flash.

2

FlashSilicon Inc. 立鴻半導體(股)公司 About Us

http://www.flashsilicon.com/about-us

FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. Encourage creative thinking and motivation. Change and challenge anywhere, anytime. Learn from successes and mistakes. No boundary ideas and science conclusions. Constructively confront and solve problems. Pay attention to details. Make and meet commitments. Do jobs with uncompromising integrity. Do the right thing right. Challenge and have fun. Recognizing and award accomplishments. 4 F2 NOR-Type Flash.

3

FlashSilicon Inc. 立鴻半導體(股)公司 SSGLNVM Application eFlash & EEPROM

http://www.flashsilicon.com/ssglnvm-application-eflash-eeprom

FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. The main application for SSGLNVM. Embedded Flash and EEPROM in Digital Circuitries. The EEPROM array is designed to output the non-volatile memory data in digital signals without utilizing an analog sense amplifier to achieve fast random read access time (. Devices and one access transistor as shown in Fig. 6. The non-volatile bit is stored by programming one to high threshold voltage state and the other...

4

FlashSilicon Inc. 立鴻半導體(股)公司 SSGLNVM Introduction

http://www.flashsilicon.com/ssglnvm-introduction

FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. The conventional Complementary-Metal-Oxide-Semiconductor (CMOS) logic process for all the digital Integrated Circuit (IC) fabrication has only one single gate and gate dielectric to form the gates of MOSFET devices. Both P-type and N-type MOSFET devices provide the basic active elements for switching, amplification, and volatile static memory in digital circuit design. Instead of depositing extra layers ...

5

FlashSilicon Inc. 立鴻半導體(股)公司 4 F2 NOR Flash Introduction

http://www.flashsilicon.com/4f2-nor-flash-introduction

FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. And Fig. 2. The NOR flash array connects NVM cells in parallel, where all the source electrodes of the NVM cell are connected to form common source lines and all the drain electrodes of the NVM cells are connected to multiple bitlines, respectively. As shown the cell schematic for an M x N NOR flash array in Fig. 1. F and the NAND-type NVM cell sizes without the contact. Bitline NOR (FSSNOR) flash array ...

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FlashSilicon Inc. 立鴻半導體股份有限公司. TEL: 886-3-560-0380 FAX: 886-3-560-0378 Email: sales@flashsilicon.com. Join us, enrich your life. FlashSilicon has been focusing on the development of semiconductor Non-Volatile Memory (NVM) fabricated with the CMOS Logic process technology. This new NVM technology is called LGNVM (Logic Gate NVM), which has been fabricated with CMOS logic process on 110nm, 55nm, 40nm nodes and has the features of. Scalable cell devices down to FinFet generations.

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