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IARPA Josephson Junction Modeling. DTRA Contract - AlGaN Radiation Effects. AFOSR MURI - AlGaN Reliability. IARPA Josephson Junction Modeling. Objective: To understand the low and high dose stability of β-phase of Gallium Oxide to neutrons, electrons and protons, in order to simulate common radiation environments. Measure fundamental parameters such as carrier removal rate, energy level and thermal stability of traps and role of hydrogen. DTRA Contract - AlGaN Radiation Effects. Small signal analysis cap...

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IARPA Josephson Junction Modeling. DTRA Contract - AlGaN Radiation Effects. AFOSR MURI - AlGaN Reliability. IARPA Josephson Junction Modeling. Objective: To understand the low and high dose stability of β-phase of Gallium Oxide to neutrons, electrons and protons, in order to simulate common radiation environments. Measure fundamental parameters such as carrier removal rate, energy level and thermal stability of traps and role of hydrogen. DTRA Contract - AlGaN Radiation Effects. Small signal analysis cap...
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Main Page - Flooxs | flooxs.ece.ufl.edu Reviews

https://flooxs.ece.ufl.edu

IARPA Josephson Junction Modeling. DTRA Contract - AlGaN Radiation Effects. AFOSR MURI - AlGaN Reliability. IARPA Josephson Junction Modeling. Objective: To understand the low and high dose stability of β-phase of Gallium Oxide to neutrons, electrons and protons, in order to simulate common radiation environments. Measure fundamental parameters such as carrier removal rate, energy level and thermal stability of traps and role of hydrogen. DTRA Contract - AlGaN Radiation Effects. Small signal analysis cap...

INTERNAL PAGES

flooxs.ece.ufl.edu flooxs.ece.ufl.edu
1

Selection Examples - Flooxs

http://www.flooxs.ece.ufl.edu/index.php/Selection_Examples

Select z = log10(Boron). Select the log10 of the chemical boron concentration. Select z = log10(BoronActive). Select the log10 of the active boron concentration. Select z = 1.0e18*exp(-x*x/0.0001) store name=Boron. Select a Gaussian profile in x. The value will be used to initialize the field Boron, and the field will be written out when structure files are saved. Retrieved from " http:/ www.flooxs.ece.ufl.edu/index.php/Selection Examples. This page was last modified on 9 October 2008, at 17:57.

2

High Level Example: p/n Diode - Flooxs

http://www.flooxs.ece.ufl.edu/index.php/High_Level_Example:_p/n_Diode

High Level Example: p/n Diode. This section provides an overview of all the necessary parts for simulating a p/n diode (in one material) in FLOODS. The objective is to familiarize a new user with the physics used in the simulation and how it is implemented in FLOODS. A more detailed, line-by-line, description of the deck for a p/n diode is given in [ Media: Example.ogg. Line x loc=0.0 spac=0.1*$Mesh Scale tag=Top line x loc=1.0 spac=0.1*$Mesh Scale tag=Bottom. Region Silicon xlo=Top xhi=Bottom init.

3

Device Models - Flooxs

http://www.flooxs.ece.ufl.edu/index.php/Device_Models

Boundary Conditions and Interfaces. Temperature-dependence of Na and Nd). Defining Your Band Terms. Ec,Ev,Efp,Efn). Due to heavy doping 1e17). Choose automatically between above 3 equations). Philips Unified Mobility Model. Boundary Conditions and Interfaces. What does "Fixed" and Flux" mean? Why Doesn't the Contact Recognize my Const Solution Variable? Diffusion across an interface. Metal gate on a MOSFET). Retrieved from " http:/ www.flooxs.ece.ufl.edu/index.php/Device Models.

4

Device Tutorial - Flooxs

http://www.flooxs.ece.ufl.edu/index.php/Device_Tutorial

It will be most helpful to review these in order, as concepts are introduced in increasing complexity, and each example builds off the previous example. 1D - Introducing the grid and the basic device equations and boundary conditions. Create a grid, learn basic device equations (including bulk equations, the ohmic contact boundary condition, and initial guess procedure). PN diode example (1D). Learn how to make doping profile (Doping=f(x,y,z). PMOS capacitor example (1D). PN diode example (2D).

5

Process Solves - Flooxs

http://www.flooxs.ece.ufl.edu/index.php/Process_Solves

These commands implement the specific process simulation commands for etching, deposition, diffusion, and implantation. They are also commands which control he operation of the main four capabilities. Both parameters and models can be selected. Specify parameters that control the properties of the defects. Deposit a new material. Simulate all types of thermal steps, including anneals, oxidations, and silicidations. Specify parameters that control the properties of the dopants.

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Publications - Nicole Rowsey

http://www.nicolerowsey.com/home/publications

CONFERENCE AND JOURNAL PAPERS. A quantitative model for ELDRS and H. Degradation effects in irradiated oxides based on first principles calculations. N L Rowsey, M. E. Law, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, and S. T. Pantelides. IEEE NSREC'11, Las Vegas, NV. To be published in IEEE Trans. Nucl. Sci. Radiation-Induced oxide charge in low- and high-H2 environments. N L Rowsey, M. E. Law, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, and S. T. Pantelides. RADECS'11, Sevilla, Spain.

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Resume - Nicole Rowsey

http://www.nicolerowsey.com/home/resume

PhD Candidate, University of Florida,. Electrical Engineering, Expected May 2012. Research Area: TCAD Modeling of Radiation-Induced Device Degradation. Thesis: TID Reliability Effects in Device SiO. Layers (Mark Law, Advisor). BSE Princeton University,. Electrical Engineering, 2006. Concentration: Solid State Physics / Devices. Minors: Engineering Physics, Music Performance. Sandia National Laboratories, Jun-Aug 2009. Research Intern for Rick Muller, Multiscale Dynamic Materials Modeling, Albuquerque, NM.

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CV - Nicole Rowsey

http://www.nicolerowsey.com/home/cv

PhD Candidate, University of Florida, Electrical Engineering, Expected May 2012. BSE, Princeton University, Electrical Engineering, 2006. Device reliability and radiation effects modeling. Mark Law (chair), Jerry G. Fossum, Toshikazu Nishida, and Brent Gila. Conference and Journal Papers. A quantitative model for ELDRS and H. Degradation effects in irradiated oxides based on first principles calculations. IEEE NSREC'11, Las Vegas, NV. To be published in IEEE Trans. Nucl. Sci. RADECS'11, Sevilla, Spain.

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Nicole Rowsey

http://www.nicolerowsey.com/home

PhD Candidate, University of Florida, Electrical Engineering, Expected May 2012. BSE, Princeton University, Electrical Engineering, 2006. I am a Ph.D. student in Electrical Engineering studying semiconductor device reliability at the University of Florida. My research. Focuses on modeling two semiconductor reliability effects with related physics: total ionizing dose (TID) radiation effects and negative bias temperature instability (NBTI). You can check out my publications.

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Interests - Nicole Rowsey

http://www.nicolerowsey.com/home/interests

My research interests include 3D device modeling (TCAD) and TCAD development, radiation-induced oxide defects and their effect on long-term device degradation, multi-gate device design, and MOS-based qubit candidate structures. Occasionally, when I'm not working, I enjoy juggling at the University of Florida. Or volunteering with MOTIV8. A mentoring program for at-risk middle school children.

tcad-solarfv.blogspot.com tcad-solarfv.blogspot.com

TCAD-Fotovoltaico: November 2010

http://tcad-solarfv.blogspot.com/2010_11_01_archive.html

Monday, November 15, 2010. Sitios Web con información sobre programas TCAD. Existen básicamente dos tipos de programas TCAD:. Ambos tienen ventajas y desventajas, aunque para fines educativos y de investigación, sin duda que los programas gratuitos son la opción a seguir. Esto, porque son gratuitos, se tiene acceso al código fuente y es posible ajustarlo de acuerdo a las necesidades y ante cualquier falla podemos realizar los arreglos pertinentes. Cosa que con los TCAD comerciales no es posible. SIMON ht...

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TCAD-Fotovoltaico: Sitios Web con información sobre programas TCAD

http://tcad-solarfv.blogspot.com/2010/11/sitios-web-con-informacion-sobre.html

Monday, November 15, 2010. Sitios Web con información sobre programas TCAD. Existen básicamente dos tipos de programas TCAD:. Ambos tienen ventajas y desventajas, aunque para fines educativos y de investigación, sin duda que los programas gratuitos son la opción a seguir. Esto, porque son gratuitos, se tiene acceso al código fuente y es posible ajustarlo de acuerdo a las necesidades y ante cualquier falla podemos realizar los arreglos pertinentes. Cosa que con los TCAD comerciales no es posible. SIMON ht...

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Επιτρέπονται μόνο οι ακόλουθοι λατινικοί χαρακτήρες: a-z, A-Z, 0-9 (και @, . για τα emails). Ξέχασες τον κωδικό σου? Τώρα μπορείτε να συνδεθείτε μέσω του λογαριασμού σας στο facebook. Κάνε κλίκ για να μετακινηθεί στα αριστερά. Κάνε κλίκ για να μετακινηθεί στα δεξιά. Η μεγαλύτερη πλατφόρμα quiz. Όλα τα δώρα μας είναι επιχορηγούμενα! Συγκέντρωσε XP παίζοντας quiz στο λεπτό και πάρε μέρος στο μεγάλο τελικό της εβδομάδας! Φόρτωση των multiplayer quiz. Μοναδικά quiz - αφιερώματα με πλούσια δώρα.

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Blog de FlOoxPr0OD - FlOo x Pr0OD - Skyrock.com

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Main Page - Flooxs

IARPA Josephson Junction Modeling. DTRA Contract - AlGaN Radiation Effects. AFOSR MURI - AlGaN Reliability. IARPA Josephson Junction Modeling. Objective: To understand the low and high dose stability of β-phase of Gallium Oxide to neutrons, electrons and protons, in order to simulate common radiation environments. Measure fundamental parameters such as carrier removal rate, energy level and thermal stability of traps and role of hydrogen. DTRA Contract - AlGaN Radiation Effects. Small signal analysis cap...

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FLOOPS/FLOODS Home

Welcome to the FLOOPS/FLOODS Home Page. This gives some information on current development projects and future updates. The manual version of the current release - version 2008. Also check out our wiki - underdevelopment. Authorization for Download of 2008. To obtain the 2008 release, you must complete the license form and fax or scan/email it to Dr. Mark E. Law at (352) 392-8671. A pdf version. Authorization for Download of 2002.

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Flooxx's blog - Floo and friends! - Skyrock.com

Heyy Saluu=) Bahh vnez fairee un ptiit tour sr mon skyblog pcq il es génialle! 05/12/2006 at 6:31 AM. 08/12/2006 at 5:50 PM. Subscribe to my blog! T Trroo trognooone :). Don't forget that insults, racism, etc. are forbidden by Skyrock's 'General Terms of Use' and that you can be identified by your IP address (66.160.134.62) if someone makes a complaint. Please enter the sequence of characters in the field below. Posted on Friday, 08 December 2006 at 5:50 PM. C ma soeuur :). Ctai a la St-Jean! Fl0o x x x.

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Blog de Flooxx3 - Mes amis & Mes délires . - Skyrock.com

Mot de passe :. J'ai oublié mon mot de passe. Mes amis and Mes délires . Et tous les autres du Village, De bellevaux, Puis de la school =). Mise à jour :. Abonne-toi à mon blog! Standard De Liège . La meilleur équipe pour moi . En force le Standard =P. N'oublie pas que les propos injurieux, racistes, etc. sont interdits par les conditions générales d'utilisation de Skyrock et que tu peux être identifié par ton adresse internet (23.21.86.101) si quelqu'un porte plainte. Ou poster avec :. Ou poster avec :.

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Blog de flOOxy--x3 - Audreey - Skyrock.com

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