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Lithography simulation with LAB enables OPC for Mask Aligner:. Iso / dense bias adjustement. Size and position of OPC feature (serifs, hammerhead). Exposing the pattern multiple times improves line-edge roughness , CD uniformity, resolution and results in a more uniform dose distribution. Shifting the fields and/or subfields between the exposures additionally reduces field / subfield stitching issues. The 3D PEC feature of BEAMER is the ultimate solution for structuring 3D resist profiles. Exposure d...

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Lithography simulation with LAB enables OPC for Mask Aligner:. Iso / dense bias adjustement. Size and position of OPC feature (serifs, hammerhead). Exposing the pattern multiple times improves line-edge roughness , CD uniformity, resolution and results in a more uniform dose distribution. Shifting the fields and/or subfields between the exposures additionally reduces field / subfield stitching issues. The 3D PEC feature of BEAMER is the ultimate solution for structuring 3D resist profiles. Exposure d...
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GenISys - Home | genisys-gmbh.com Reviews

https://genisys-gmbh.com

Lithography simulation with LAB enables OPC for Mask Aligner:. Iso / dense bias adjustement. Size and position of OPC feature (serifs, hammerhead). Exposing the pattern multiple times improves line-edge roughness , CD uniformity, resolution and results in a more uniform dose distribution. Shifting the fields and/or subfields between the exposures additionally reduces field / subfield stitching issues. The 3D PEC feature of BEAMER is the ultimate solution for structuring 3D resist profiles. Exposure d...

INTERNAL PAGES

genisys-gmbh.com genisys-gmbh.com
1

GenISys - 3-D e-Beam Lithography

https://genisys-gmbh.com/web/index.php?id=12

A growing demand for fabrication of 3D nanostructures like diffractive optical elements or computer generated holograms require a complex data-preparation flow to define the post-development resist thickness at all positions. Since resist thickness is a function of the development process (as described by the contrast curve and the absorbed energy at a given position) and the layout condition, experimental trial and error optimization is not feasible as the number of parameters and interactions is ve...

2

GenISys - Products

https://genisys-gmbh.com/web/products

Superior data preparation for e-beam and laser lithography system. High-resolution and high-throughput e-beam lithography is severely impacted by process effects, electron scattering effects, and tool artifacts resulting in non- ideal pattern transfer . Layout and process optimization platform for most common lithography technologies. Electron Scattering and Process Blur quantified. Ultrafast tool for inspecting and comparing layouts. See our most recent application examples.

3

GenISys - High Resolution & Fast Writing

https://genisys-gmbh.com/web/index.php?id=11

High Resolution and Fast Writing. E-Beam lithography can achieve very high resolution and low line-edge roughness by using a small beam size (low beam current). Consequently, this leads to small beam-step sizes and very long exposure times for larger areas to be written. In contrast, large beam currents are needed for fast writing, but this results in large beam sizes and large beam-step sizes, leading to lower resolution and larger LER. Click here to download comprehensive information.

4

GenISys - LAB

https://genisys-gmbh.com/web/products/lab.html

All in One Lithography Simulation. Layout and process optimization platform for most common lithography technologies. Experimental layout optimization and process development is highly time consuming and thereby expensive. Lithography simulation enables virtual exploration of a huge parameter space very quickly. LAB. Enables further miniaturization for proximity, projection, laser and electron beam lithography. Import Export of all major layout formats (GDSII, OASIS, CIF, DXF). Loading full layout data.

5

GenISys - Applications

https://genisys-gmbh.com/web/applications.html

Using formulas in BEAMER Modules. High Resolution and Fast Writing. OPC for Mask Aligner.

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LINKS TO THIS WEBSITE

lozestech.com lozestech.com

Lozes Technology Consulting • Links

http://www.lozestech.com/links.php

2008-2016 Richard L. Lozes. Unless otherwise specified. Written permission is required to reproduce any material contained in this website. Website by Danielle Signor Design.

mne2015.org mne2015.org

Short courses Monday 21 September, 2015 | Micro and Nano Engineering 2015

http://mne2015.org/programme/satellite-meetings/short-courses

Micro and Nano Engineering 2015. Skip to primary content. Skip to secondary content. MEE Young Investigator Award. Programme at a glance. Late & Hot News Programme. General info for MNE attendees (PDF file). Social programme / Companion activities. Short courses Monday 21 September, 2015. Late and Hot News Session. Micro- Nano- graph contest. Exhibitor / Sponsor contact. New manuscript submission deadline: November 8, 2015, midnight. For more information click here. Late and Hot News Programme is online.

mne2015.org mne2015.org

Programme at a glance | Micro and Nano Engineering 2015

http://mne2015.org/programme/programme-at-a-glance

Micro and Nano Engineering 2015. Skip to primary content. Skip to secondary content. MEE Young Investigator Award. Programme at a glance. Late & Hot News Programme. General info for MNE attendees (PDF file). Social programme / Companion activities. Short courses Monday 21 September, 2015. Late and Hot News Session. Micro- Nano- graph contest. Exhibitor / Sponsor contact. New manuscript submission deadline: November 8, 2015, midnight. For more information click here. Late and Hot News Programme is online.

mne2011.org mne2011.org

MNE 2011

http://www.mne2011.org/sponsors-and-exhibitors

On Micro and Nano Engineering. 19 - 23 September 2011. Service Catalogue for Exhibitors. THE MNE2011 WAS A GREAT SUCCESS! WE WOULD LIKE TO THANK ALL ATTENDEES, SPEAKERS, AUTHORS, EXHIBITORS AND SPONSORS FOR THEIR PARTICIPATION, VALUABLE CONTRIBUTIONS AND SUPPORT. The exhibition will be set up on level B and C of the conference venue. Bcc Berliner Congress Center. Tel 49 30 23806-750. Poster Presentation and Coffee Breaks. Main Entrance, Commercial Exhibition (Silver and Gold booths),. To ensure prompt de...

mne2011.org mne2011.org

MNE 2011

http://www.mne2011.org/reviewers-awards

On Micro and Nano Engineering. 19 - 23 September 2011. MNE 2011 Organizing Committee. THE MNE2011 WAS A GREAT SUCCESS! WE WOULD LIKE TO THANK ALL ATTENDEES, SPEAKERS, AUTHORS, EXHIBITORS AND SPONSORS FOR THEIR PARTICIPATION, VALUABLE CONTRIBUTIONS AND SUPPORT. Anja Boisen, Technical University of Denmark – Denmark. Michel Despont, IBM Research Zurich – Switzerland. Zahid Durrani, Imperial College London – United Kingdom. Massimo Gentili, Innovation and Technology Management – Italy. Feel free to get.

mne2011.org mne2011.org

MNE 2011

http://www.mne2011.org/short-courses

On Micro and Nano Engineering. 19 - 23 September 2011. THE MNE2011 WAS A GREAT SUCCESS! WE WOULD LIKE TO THANK ALL ATTENDEES, SPEAKERS, AUTHORS, EXHIBITORS AND SPONSORS FOR THEIR PARTICIPATION, VALUABLE CONTRIBUTIONS AND SUPPORT. Four (4) short courses will be organised on Monday, 19 September:. 2 parallel sessions in the morning (10:00 am- 13:30 pm). 2 parallel sessions in the afternoon (13.30 am – 5.00 pm). Monday, 9/19/2011, 10:00 – 13:30. Fine Beam induced processing. Feel free to get. 49 30 657621 92.

mne2011.org mne2011.org

MNE 2011

http://www.mne2011.org/conference-flyer-download

On Micro and Nano Engineering. 19 - 23 September 2011. Scope of the Conference. How to get around. THE MNE2011 WAS A GREAT SUCCESS! WE WOULD LIKE TO THANK ALL ATTENDEES, SPEAKERS, AUTHORS, EXHIBITORS AND SPONSORS FOR THEIR PARTICIPATION, VALUABLE CONTRIBUTIONS AND SUPPORT. Conference Flyer Download - pdf. Feel free to get. 49 30 657621 92. 49 30 657621 93. Micro resist technology GmbH. Chair: Mrs. Gabi Gruetzner, Managing Director. Koepenicker Strasse 325,. 12555 Berlin / Germany. 10 OCTOBER, 2011.

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GenISys - Home

Lithography simulation with LAB enables OPC for Mask Aligner:. Iso / dense bias adjustement. Size and position of OPC feature (serifs, hammerhead). Exposing the pattern multiple times improves line-edge roughness , CD uniformity, resolution and results in a more uniform dose distribution. Shifting the fields and/or subfields between the exposures additionally reduces field / subfield stitching issues. The 3D PEC feature of BEAMER is the ultimate solution for structuring 3D resist profiles. Exposure d...

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