guo.ece.ufl.edu

Jing Guo's Homepage

University of Florida, Gainesville, FL. Edu dot ufl at guoj. Modeling and Simulation of Nanoelectronic Devices and Materials. Quantum Transport in Nanodevices. Theory of Nanoscale Transistors. Quantum Phenomena in Electronics (Fall, 2004). Introductory Quantum Mechanics for Nanodevices. Fall 2011; Fall 2010; Fall 2009; Fall 2008; Sping 2007; Spring, 2005). Spring 2010, Spring 2009, Fall, 2005). Semiconductor Device Theory II. Spring 2012; Spring 2011; Fall 2007; Fall 2006).

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University of Florida, Gainesville, FL. Edu dot ufl at guoj. Modeling and Simulation of Nanoelectronic Devices and Materials. Quantum Transport in Nanodevices. Theory of Nanoscale Transistors. Quantum Phenomena in Electronics (Fall, 2004). Introductory Quantum Mechanics for Nanodevices. Fall 2011; Fall 2010; Fall 2009; Fall 2008; Sping 2007; Spring, 2005). Spring 2010, Spring 2009, Fall, 2005). Semiconductor Device Theory II. Spring 2012; Spring 2011; Fall 2007; Fall 2006).

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Jing Guo's Homepage | guo.ece.ufl.edu Reviews

https://guo.ece.ufl.edu

University of Florida, Gainesville, FL. Edu dot ufl at guoj. Modeling and Simulation of Nanoelectronic Devices and Materials. Quantum Transport in Nanodevices. Theory of Nanoscale Transistors. Quantum Phenomena in Electronics (Fall, 2004). Introductory Quantum Mechanics for Nanodevices. Fall 2011; Fall 2010; Fall 2009; Fall 2008; Sping 2007; Spring, 2005). Spring 2010, Spring 2009, Fall, 2005). Semiconductor Device Theory II. Spring 2012; Spring 2011; Fall 2007; Fall 2006).

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guo.ece.ufl.edu

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Jing Guo's Homepage

http://www.guo.ece.ufl.edu/Journals.html

L Liu and J. Guo, Assessment of Performance Potential of MoS2-Based Topological Insulator FETs, J. Appl. Phys. Vol 118, p. 124502, 2015. W Chen, W. Yin, E. Li, M. Cheng, and J. Guo, Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase Change Memory Array for 3-D ICs, IEEE Electron Dev. Lett. Vol 62, p. 3258, 2015. Vol 9, pp.2071 C2079, 2015. K T Lam and J. Guo, Plasmonics in strained monolayer black phosphorus, J. Appl. Phys. Vol 117, p. 113105, 2015. S B Desai...

2

Jing Guo's Homepage

http://www.guo.ece.ufl.edu/Conferences.html

Last updated, Jan. 2010). Y Ouyang, H. Dai, and J. Guo, "Multilayer graphane nanoribbon for 3D stacking of transistor channel," Int. Electron Device Meeting (IEDM) Tech. Dig. Baltimore, MD, Dec. 2009. Y Ouyang, P. Zhao, and J. Guo, Ab initio and Quantum Transport Simulation of Silicide-Silicon Contacts SRC TECHCON. Austin, TX, Sep, 2009. P Zhao, Y. Ouyang, J. Chauhan, and J. Guo First Principal Simulation of CoSi2/Si and NiSi2/Si Contacts Device Research Conference (DRC). June, University Park, June, 2009.

3

Jing Guo's Homepage

http://www.guo.ece.ufl.edu/Group.html

Professor, Department of Electrical and Computer Engineering, University of Florida. Current Ph.D. Students:. PhD, Aug. 2014, Samsung Research). PhD, Aug. 2014, Samsung). PhD, Dec. 2008, Asst. Prof. in Univ. of Waterloo). PhD 2011, Maxim Semiconductors). PhD 2012, Intel Corp.). MS, 2007. Initial employment: Lockheed Martin). MS, 2007, Ph.D. student in Purdue University). MS, 2011. Initial employment: Hynix Semiconductors). Postdoc Research Associate, Sep. 2010-June 2012, Global Foundries).

4

EEL 4351 Electron Device Fundamentals

http://www.guo.ece.ufl.edu/EEL6397.html

EEL 6397 Semiconductor Device Theory. Spring, 2010, 1:55-2:45pm T, 1:55-3:50pm, R, NEB 201). 1) Develop a fundamental understanding on the device physics of the most important semiconductor devices, such as PN junctions, metal-semiconductor contacts, metal-oxide-semiconductor capacitors, and field-effect transistors. 2) Develop the capability to analyze device characteristics based on fundamental device theories. EEE 5426 (EEE 4420) Introduction to Nanodevices* or equivalent or consent by instructor.

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Multiple transistor: junio 2010

http://jeanmendez.blogspot.com/2010_06_01_archive.html

Sábado, 26 de junio de 2010. Creación de circuitos sobre grafeno. Una punta de AFM caliente es capaz de dibujar líneas conductoras de nanómetros de ancho sobre óxido de grafeno. Punta caliente: Una punta de AFM calentada a más de 150 °C es capaz de grabar una superficie de óxido de grafeno aislante para crear delgados hilos conductores a nanoescala. Fuente: Debin Wang, Georgia Tech. En lugar de todo eso, en el nuevo estudio publicado en Science. Los métodos conocidos para crear nanocintas son dificultoso...

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guo.ece.ufl.edu

Jing Guo's Homepage

University of Florida, Gainesville, FL. Edu dot ufl at guoj. Modeling and Simulation of Nanoelectronic Devices and Materials. Quantum Transport in Nanodevices. Theory of Nanoscale Transistors. Quantum Phenomena in Electronics (Fall, 2004). Introductory Quantum Mechanics for Nanodevices. Fall 2011; Fall 2010; Fall 2009; Fall 2008; Sping 2007; Spring, 2005). Spring 2010, Spring 2009, Fall, 2005). Semiconductor Device Theory II. Spring 2012; Spring 2011; Fall 2007; Fall 2006).

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