
idc-com.cn
谏早电子株式会社Developed a MOSFET best suited as a switching device for a high-side switching circuit! Pch, VDSS: -30V, ID: -2.5A, -4V-drive type, Package: SOT-89. Started accepting sample orders. (Type name: INJ0212AP1. Developed gate driver unit with dual channels possible to drive 1200V,800A class Full-SiC module. It is easy to use by module mountable unit structure and built-in short circuit protection circuit. Isolation strength of 2500Vrms, 1 minute, Output gate peak current of 7A(max) .
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