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Innolume - High Power Laser Diodes, Optical Amplifiers, Gain-chips, Superluminescent Diodes, DFB, DBR, FBG, pulsed lasers, RCLED

DFB and DBR lasers. DFB and DBR lasers. Wavelengths 780, 920, 980 nm (new). Gain 35dB at 1130 nm (new). 300 mW at 1060 nm (new). May 15, 2015. 15W peak power from 1064nm seed source was achieved. February 23, 2015. New Gain-chip at 780 nm with output power 100mW is announced. January 06, 2015. Gain-chip at 1270 nm and output power 200 mW is produced. December 18, 2014. Gain-chip at 1180 nm wavelength and output power more than 200 mW is introduced. December 08, 2014. November 14, 2014. October 31, 2014.

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Innolume - High Power Laser Diodes, Optical Amplifiers, Gain-chips, Superluminescent Diodes, DFB, DBR, FBG, pulsed lasers, RCLED | innolume.com Reviews

<META> DESCRIPTION

DFB and DBR lasers. DFB and DBR lasers. Wavelengths 780, 920, 980 nm (new). Gain 35dB at 1130 nm (new). 300 mW at 1060 nm (new). May 15, 2015. 15W peak power from 1064nm seed source was achieved. February 23, 2015. New Gain-chip at 780 nm with output power 100mW is announced. January 06, 2015. Gain-chip at 1270 nm and output power 200 mW is produced. December 18, 2014. Gain-chip at 1180 nm wavelength and output power more than 200 mW is introduced. December 08, 2014. November 14, 2014. October 31, 2014.

<META> KEYWORDS

1 High Power Laser Diodes

2 Optical Amplifiers

3 Gain-chips

4 Superluminescent Diodes

5 DFB

6 DBR

7 FBG

8 pulsed lasers

9 SOA

10 BOA

CONTENT

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KEYWORDS ON PAGE

news,laser diode driver,single mode laser diodes,broad area laser diodes,comb laser,gain chips,gain modules,semiconductor optical amplifiers,rcled and led,superluminescent diodes,epi wafers,applications,raman amplification,interconnect,technology,imprint

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Innolume - High Power Laser Diodes, Optical Amplifiers, Gain-chips, Superluminescent Diodes, DFB, DBR, FBG, pulsed lasers, RCLED | innolume.com Reviews

https://innolume.com

DFB and DBR lasers. DFB and DBR lasers. Wavelengths 780, 920, 980 nm (new). Gain 35dB at 1130 nm (new). 300 mW at 1060 nm (new). May 15, 2015. 15W peak power from 1064nm seed source was achieved. February 23, 2015. New Gain-chip at 780 nm with output power 100mW is announced. January 06, 2015. Gain-chip at 1270 nm and output power 200 mW is produced. December 18, 2014. Gain-chip at 1180 nm wavelength and output power more than 200 mW is introduced. December 08, 2014. November 14, 2014. October 31, 2014.

INTERNAL PAGES

innolume.com

1

Innolume - Products - Broad Area High Power Laser Diodes

http://www.innolume.com/products/BA_HPLD.htm

DFB and DBR lasers. Multi-mode Edge Emitting High Power Laser Diodes (HPLD) up to 20W in 970-1330nm spectral range on C-mount, submounts or in fiber-coupled version. Output power of Broad-area Laser Diodes (CoC). Output Power of Broad-area Laser Diodes (Fiber Coupled). Any customized wavelength from the 780-1330 nm range is possible. Please, contact us.

2

Innolume - Products - Comb-Laser

http://www.innolume.com/products/Comb-laser.htm

DFB and DBR lasers. Please, contact us.

3

Innolume - Products - Superluminescent Diodes

http://www.innolume.com/products/SLD.htm

DFB and DBR lasers. Superluminescent Diodes (SLD, SLED). Click on image to show legend. ASE spectrum mean wavelength (nm). ASE bandwidth FWHM (nm). Type of fiber: PM or HI. Output optical power ex fiber (mW). Typical parameters of fiber-coupled SLDs. ASE maximum, RMS in 1 nm range, 10pm resolution. Any customized wavelength from the 780-1330 nm range is possible. Please, contact us.

4

Innolume - Products - Epi-Wafers

http://www.innolume.com/products/Epi.htm

DFB and DBR lasers. Innolume provides Quantum Dot and Quantum Well wafers used in a wide range of optoelectronic applications. Our advanced wafer growth facilities allow even the most demanding customer design specifications to be met, be it for commercial applications or for research purposes. Epi-Wafers (750 1350 nm) for:. High-Power Laser Diodes (HPLD). Semiconductor Optical Amplifiers (SOA).

5

Innolume - High Power Laser Diodes, Optical Amplifiers, Gain-chips, Superluminescent Diodes, DFB, DBR, FBG, pulsed lasers, RCLED

http://www.innolume.com/index.htm

DFB and DBR lasers. 15W at 1030-1130 nm (new). DFB and DBR lasers. Wavelengths 780, 920, 980 nm (new). Gain 35dB at 1130 nm (new). 300 mW at 1060 nm (new). September 24, 2015. 60mW DFB laser family for O-Band interconnect application is introduced. May 15, 2015. 15W peak power from 1064nm seed source was achieved. February 23, 2015. New Gain-chip at 780 nm with output power 100mW is announced. January 06, 2015. Gain-chip at 1270 nm and output power 200 mW is produced. December 18, 2014. December 08, 2014.

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quaternian.org

Innolume | Quaternian

http://www.quaternian.org/innolume

University of Cambridge (UK). Innolume GmbH (INNO) (Germany). Innolume GmbH (INNO) is a start-up company with the technical team originating from the laboratory of Prof. Alferov (Nobel Prize Winner in Physics 2000) from Abraham Ioffe Institute, St. Petersburg, Russia. University of Cambridge (UK). Quaternian, Tel: 353 (0)21 4904863 • Email Quaternian. The Quaternian project acknowledges funding support received from the European Unionâ s Seventh Framework program managed by: REA-Research Executive Agency...

quaternian.org

QUATERNIAN - Last Span Communications

http://www.quaternian.org/site

University of Cambridge (UK). QUATERNIAN - Last Span Communications. Semiconductor quantum dots are a major advance in the growth of lasers and optical amplifiers. Lasers built from this material class offer revolutionary performance advantages such as low noise, temperature insensitivity and reduced non-linearities. 10 Gb/s GPON transmission by quantum-dot single mode lasers. Using optical OFDM B:Industrial. QUATERNIAN consortium welcomes new partners B-Industrial. The Quaternian project acknowledges fu...

quaternian.org

QUATERNIAN - Last Span Communications - News - 10 Gb/s QD lasers

http://www.quaternian.org/news

University of Cambridge (UK). 10 Gb/s GPON transmission by quantum-dot single mode lasers. Using optical OFDM B:Industrial. QUATERNIAN consortium welcomes new partners B-Industrial. High power Raman pumps for XG-PON now demonstrated! XG-PON Raman Reach Extender Based on Quantum Dot Lasers. Paper Tu.3.2.4, European Conference and Exhibition on Optical Communication (ECOC), 21-25 Sept. 2014, Cannes, France. University of Cambridge (UK).

nanoinitiative-bayern.de

Kooperationspartner: Nanoinitiative Bayern GmbH

http://www.nanoinitiative-bayern.de/kooperationspartner.html

Forschung und Lehre in Bayern. Ausgewählte Netzwerke und Projekte. Nanonetz Bayern e.V. Unseren aktuellen Newsletter als PDF herunter. Nanotech Cluster SME Mission des EU-Japan Centre for Industrial Cooperation vom 13.-17.02.2017 nach Tokio/Japan. Neue BMBF-Fördermaßnahme KMU-NetC fördert strategische KMU-Innovationsverbünde in Netzwerken und Clustern. Wann ist Nano sicher? Neue Broschüre zum Thema Nanosicherheit. Clustergemeinschaftsstand auf Messe nano tech vom 15.-17.02.2017 in Tokio/Japan. Bayerische...

nanosemiconductor.com

Innolume - Imprint

http://www.nanosemiconductor.com/company/imprint.htm

DFB and DBR lasers. 44263 Dortmund / Deutschland. Telefon: 49 231 477 30 200. Telefax: 49 231 477 30 250. Internet: www.innolume.com. USt-ID gemäß 27 a Umsatzsteuergesetz:. DE 225 038 980. Trotz sorgfältiger inhaltlicher Kontrolle übernehmen wir keine Haftung für die Inhalte externer Links. Für den Inhalt der verlinkten Seiten sind ausschließlich deren Betreiber verantwortlich.

innolum.com

Innolume - Imprint

http://www.innolum.com/company/imprint.htm

DFB and DBR lasers. 44263 Dortmund / Deutschland. Telefon: 49 231 477 30 200. Telefax: 49 231 477 30 250. Internet: www.innolume.com. USt-ID gemäß 27 a Umsatzsteuergesetz:. DE 225 038 980. Trotz sorgfältiger inhaltlicher Kontrolle übernehmen wir keine Haftung für die Inhalte externer Links. Für den Inhalt der verlinkten Seiten sind ausschließlich deren Betreiber verantwortlich.

sussp66.hw.ac.uk

SUSSP66 Sponsors

http://www.sussp66.hw.ac.uk/sponsors.htm

We wish to thank the following for their contribution to the success of this conference: European Office of Aerospace Research and Development, Air Force Office of Scientific Research, United States Air Force Research Laboratory (www.london.af.mil).

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Leading innovator and supplier of miniature laser scanning modules for ToF LIDAR, medical imaging, illumination and projection. Innovative MEMS mirror technology. Leading innovator and supplier of miniature laser scanning modules for ToF LIDAR, medical imaging, illumination and projection. Innovative MEMS mirror technology. NOW AVAILABLE: development technology and samples. Choice for 1D over 2D. AUTOMOTIVE LIDAR FOR ADAS AND AUTONOMOUS DRIVING. LIDAR is crucial for the success of ADAS and autonomous dri...

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Innolume - High Power Laser Diodes, Optical Amplifiers, Gain-chips, Superluminescent Diodes, DFB, DBR, FBG, pulsed lasers, RCLED

DFB and DBR lasers. DFB and DBR lasers. Wavelengths 780, 920, 980 nm (new). Gain 35dB at 1130 nm (new). 300 mW at 1060 nm (new). May 15, 2015. 15W peak power from 1064nm seed source was achieved. February 23, 2015. New Gain-chip at 780 nm with output power 100mW is announced. January 06, 2015. Gain-chip at 1270 nm and output power 200 mW is produced. December 18, 2014. Gain-chip at 1180 nm wavelength and output power more than 200 mW is introduced. December 08, 2014. November 14, 2014. October 31, 2014.

innolume.com

Innolume - High Power Laser Diodes, Optical Amplifiers, Gain-chips, Superluminescent Diodes, DFB, DBR, FBG, pulsed lasers, RCLED

DFB and DBR lasers. DFB and DBR lasers. Wavelengths 780, 920, 980 nm (new). Gain 35dB at 1130 nm (new). 300 mW at 1060 nm (new). May 15, 2015. 15W peak power from 1064nm seed source was achieved. February 23, 2015. New Gain-chip at 780 nm with output power 100mW is announced. January 06, 2015. Gain-chip at 1270 nm and output power 200 mW is produced. December 18, 2014. Gain-chip at 1180 nm wavelength and output power more than 200 mW is introduced. December 08, 2014. November 14, 2014. October 31, 2014.

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