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Kristin Hernandez

Sandisk to Ramp 19 nm Flash in Q4 2011. Sandisk revealed that it will be transitioning its 24 nm flash production to a new 19 nm generation to remain cost competitive in the industry. 24 nm flash accounted for about 60 percent of the production in the third quarter; Q4 is likely to see an increase in 24 nm manufacturing while 19 nm is ramping up and should enable the company to deliver higher-capacity both 2-bit-per-cell MLC as well as 3-bit-per-cell X3 memory in 2012. Our present device consumes more po...

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Kristin Hernandez | kristinhernandez.blogspot.com Reviews

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Sandisk to Ramp 19 nm Flash in Q4 2011. Sandisk revealed that it will be transitioning its 24 nm flash production to a new 19 nm generation to remain cost competitive in the industry. 24 nm flash accounted for about 60 percent of the production in the third quarter; Q4 is likely to see an increase in 24 nm manufacturing while 19 nm is ramping up and should enable the company to deliver higher-capacity both 2-bit-per-cell MLC as well as 3-bit-per-cell X3 memory in 2012. Our present device consumes more po...

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Kristin Hernandez | kristinhernandez.blogspot.com Reviews

https://kristinhernandez.blogspot.com

Sandisk to Ramp 19 nm Flash in Q4 2011. Sandisk revealed that it will be transitioning its 24 nm flash production to a new 19 nm generation to remain cost competitive in the industry. 24 nm flash accounted for about 60 percent of the production in the third quarter; Q4 is likely to see an increase in 24 nm manufacturing while 19 nm is ramping up and should enable the company to deliver higher-capacity both 2-bit-per-cell MLC as well as 3-bit-per-cell X3 memory in 2012. Our present device consumes more po...

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kristinhernandez.blogspot.com

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Kristin Hernandez: Sandisk to Ramp 19 nm Flash in Q4 2011

http://www.kristinhernandez.blogspot.com/2011/11/sandisk-to-ramp-19-nm-flash-in-q4-2011.html

Sandisk to Ramp 19 nm Flash in Q4 2011. Sandisk revealed that it will be transitioning its 24 nm flash production to a new 19 nm generation to remain cost competitive in the industry. 24 nm flash accounted for about 60 percent of the production in the third quarter; Q4 is likely to see an increase in 24 nm manufacturing while 19 nm is ramping up and should enable the company to deliver higher-capacity both 2-bit-per-cell MLC as well as 3-bit-per-cell X3 memory in 2012. 订阅：帖子评论 (Atom).

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Kristin Hernandez: 十一月 2011

http://www.kristinhernandez.blogspot.com/2011_11_01_archive.html

Sandisk to Ramp 19 nm Flash in Q4 2011. Sandisk revealed that it will be transitioning its 24 nm flash production to a new 19 nm generation to remain cost competitive in the industry. 24 nm flash accounted for about 60 percent of the production in the third quarter; Q4 is likely to see an increase in 24 nm manufacturing while 19 nm is ramping up and should enable the company to deliver higher-capacity both 2-bit-per-cell MLC as well as 3-bit-per-cell X3 memory in 2012. 订阅：帖子 (Atom).

3

Kristin Hernandez: 十月 2011

http://www.kristinhernandez.blogspot.com/2011_10_01_archive.html

FeTRAM: A New Idea to Replace Flash Memory. Researchers at Purdue University are developing a new type of memory that is promised to be faster and less energy intensive than Flash. Called FeTRAM, the memory is said to be in a "very nascent stage" and there is not even a prototype. However, the theory and a test circuit exist and the scientists behind the project claim that the technology will enable memory devices that are faster than flash and consume less power. 订阅：帖子 (Atom).

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Kristin Hernandez: FeTRAM: A New Idea to Replace Flash Memory

http://www.kristinhernandez.blogspot.com/2011/10/fetram-new-idea-to-replace-flash-memory.html

FeTRAM: A New Idea to Replace Flash Memory. Researchers at Purdue University are developing a new type of memory that is promised to be faster and less energy intensive than Flash. Called FeTRAM, the memory is said to be in a "very nascent stage" and there is not even a prototype. However, the theory and a test circuit exist and the scientists behind the project claim that the technology will enable memory devices that are faster than flash and consume less power. 订阅：帖子评论 (Atom).

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Sandisk to Ramp 19 nm Flash in Q4 2011. Sandisk revealed that it will be transitioning its 24 nm flash production to a new 19 nm generation to remain cost competitive in the industry. 24 nm flash accounted for about 60 percent of the production in the third quarter; Q4 is likely to see an increase in 24 nm manufacturing while 19 nm is ramping up and should enable the company to deliver higher-capacity both 2-bit-per-cell MLC as well as 3-bit-per-cell X3 memory in 2012. Our present device consumes more po...

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