Microwave RTP of SiC. Microwave RTP of GaN. Demo: A video of RTP. LT Technologies received a NSF SBIR Phase IIB Grant. The grant was awarded to fund. 2011, 111301, "Microwave Annealing of Very High Dose Aluminum Implanted 4H-SiC.
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LTT | lt-technologies.com Reviews
https://lt-technologies.com
Microwave RTP of SiC. Microwave RTP of GaN. Demo: A video of RTP. LT Technologies received a NSF SBIR Phase IIB Grant. The grant was awarded to fund. 2011, 111301, "Microwave Annealing of Very High Dose Aluminum Implanted 4H-SiC.
lt-technologies.com
LT Technologies, LLC.
http://www.lt-technologies.com/applications.html
3819 Charles Stewart Dr. Fairfax, VA 22033. Applications: Rapid Thermal Processing (RTP). Microwave RTP of Semiconductors. In semiconductor industry, the term rapid thermal processing (RTP) refers to as a process of rapidly heating wafers to high temperature, holding for a short period, and rapidly cooling. This thermal process is critical to achieve the desired electrical parameters. The Hotter and Faster Trend in Semiconductor RTP.
LT Technologies, LLC.
http://www.lt-technologies.com/publications.html
3819 Charles Stewart Drive. Fairfax, VA 22033. Phone: 703 620 0963. A Nath, M. Rao, Y-L Tian, et al. "Microwave Annealing of High Dose Al -implanted 4H-SiC: Towards Device Fabrication" JOURNAL OF ELECTRONIC MATERIALS. Volume: 43 Issue: 4 p843-849, 2014. R Nipoti, A. Nath, Y-L Tian et al. "Fully implanted vertical p-i-n diodes using high-purity semi-insulating 4H-SiC wafers " SEMICONDUCTOR SCIENCE AND TECHNOLOGY. Vol27 Issue: 5 055005, MAY 2012. 4, 111301, 2011. Vol 35, p181, March , 2010. SG Sundaresan, ...
LT Technologies, LLC.
http://www.lt-technologies.com/partnerships.html
3819 Charles Stewart Dr. Fairfax, VA 22033. LT Technologies is collaborating closely with George Mason University, NIST, the Army Research Lab, and GE Global Research in its research and development efforts.
LT Technologies, LLC.
http://www.lt-technologies.com/applications_SiC.html
3819 Charles Stewart Dr. Fairfax, VA 22033. Applications: Microwave RTP of SiC. Microwave RTP of SiC. SiC is an important wide bandgap semiconductor used in high-frequency, high power and high temperature devices. Annealing of ion-implanted P-type SiC requires very high temperatures and short duration. LTT has performed extensive research on microwave RTP of SiC at temperatures of 1800-2100C for 15-30 seconds. Some important results and advantages of microwave RTP of SiC are highlighted below:.
LT Technologies, LLC.
http://www.lt-technologies.com/demo.html
3819 Charles Stewart Dr. VA. Click the button to start a video for microwave rapid heaing of SiC up to 1900C. Video time: 12 seconds.
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Microwave RTP of SiC. Microwave RTP of GaN. Demo: A video of RTP. LT Technologies received a NSF SBIR Phase IIB Grant. The grant was awarded to fund. 2011, 111301, "Microwave Annealing of Very High Dose Aluminum Implanted 4H-SiC.
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