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Arkansas Electrical Characterization Laboratory

III-V Semiconductor Materials and Device Growth by MBE. Electrical Metrology and Magnetic Characterization of Semiconductor Materials and Devices. The Arkansas Electrical Characterization Laboratory offers analytical services. This. Includes electrical and magnetic characterization of materials and devices. Current-voltage, Hall effect measurements, capacitance-voltage, and measurements of magnetoresistance and low-frequency noise can be performed on request in wide temperature. And magnetic field ranges.

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Arkansas Electrical Characterization Laboratory | nano-department.com Reviews
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III-V Semiconductor Materials and Device Growth by MBE. Electrical Metrology and Magnetic Characterization of Semiconductor Materials and Devices. The Arkansas Electrical Characterization Laboratory offers analytical services. This. Includes electrical and magnetic characterization of materials and devices. Current-voltage, Hall effect measurements, capacitance-voltage, and measurements of magnetoresistance and low-frequency noise can be performed on request in wide temperature. And magnetic field ranges.
<META>
KEYWORDS
1 search this site
2 about us
3 alumni
4 research overview
5 researchers and staff
6 students
7 analytical services
8 electrical metrology
9 epitaxial material growth
10 hall effect measurements
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search this site,about us,alumni,research overview,researchers and staff,students,analytical services,electrical metrology,epitaxial material growth,hall effect measurements,other services,solar cells characterization,squid magnetometry,instruments,rates
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Arkansas Electrical Characterization Laboratory | nano-department.com Reviews

https://nano-department.com

III-V Semiconductor Materials and Device Growth by MBE. Electrical Metrology and Magnetic Characterization of Semiconductor Materials and Devices. The Arkansas Electrical Characterization Laboratory offers analytical services. This. Includes electrical and magnetic characterization of materials and devices. Current-voltage, Hall effect measurements, capacitance-voltage, and measurements of magnetoresistance and low-frequency noise can be performed on request in wide temperature. And magnetic field ranges.

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1

About Us - Arkansas Electrical Characterization Laboratory

http://www.nano-department.com/about-us

Arkansas Electrical Characterization Laboratory was started in 2004 at the Center for Semiconductor Physics in Nanostructures ( CSPIN. A significant part of our time is focused on education and on professional skills development in new student generations. Our goal is to prepare students for their future successful career by becoming the leading experts in the field of the material science, physics and nanotechnology.

2

Other Services - Arkansas Electrical Characterization Laboratory

http://www.nano-department.com/Services/other-services

3

Solar Cells Characterization - Arkansas Electrical Characterization Laboratory

http://www.nano-department.com/Services/solar-cells-characterization

Solar Cell Efficiency Measurements. Measurements of the solar cell efficiency can be offered for research samples of 1x1. Cm squared. We have well calibrated AM 1.5. Solar Simulator ( 100. From PV Measurements Inc. Calibrations of the AM 1.5. External Quantum Efficiency Measurements.

4

Hall Effect Measurements - Arkansas Electrical Characterization Laboratory

http://www.nano-department.com/Services/hall-effect-measurements

Temperature Dependent Hall Effect. Hall effect measurements are offered for a variety of semiconductor materials. We offer measurements in wide temperature ( 1. 8 K - 400. K) and magnetic field (- 9. Please contact laboratory staff for more information. Resistivity measurements as function of magnetic field (up to 9 Tesla) are offered at low temperatures ( 1.5. Please contact laboratory staff for more information.

5

Publications - Arkansas Electrical Characterization Laboratory

http://www.nano-department.com/Publications

Vas P Kunets, C. S. Furrow, T. Al. Morgan, Y. Hirono, M. E. Ware, V. G. Dorogan, Yu. I. Mazur, V. P. Kunets, G. J. Salamo, InGaAs quantum wire intermediate band solar cell. Appl Phys. Lett. 101. S V Kondratenko, O. V. Vakulenko, Vas. P. Kunets, Yu. I. Mazur, V. G. Dorogan, M. E. Ware, G. J. Salamo, Photoconductivity peculiarities in InGaAs quantum wire heterostructures: anisotropy and high photoresponsivity at room temperature. Semicond. Sci. Technol. 27, 105024 (2012). J Appl. Phys. 112. J Wu, S. Le...

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