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NQS-group Home Nanodevice Quantm SimulationsThe NQS group develops state-of-the-art 1D, 2D and 3D quantum simulation codes to study nano-transistors, photovoltaïcs, thermoelectricity and spintronics.
http://www.nqs-group.com/
The NQS group develops state-of-the-art 1D, 2D and 3D quantum simulation codes to study nano-transistors, photovoltaïcs, thermoelectricity and spintronics.
http://www.nqs-group.com/
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NQS-group Home Nanodevice Quantm Simulations | nqs-group.com Reviews
https://nqs-group.com
The NQS group develops state-of-the-art 1D, 2D and 3D quantum simulation codes to study nano-transistors, photovoltaïcs, thermoelectricity and spintronics.
nqs-group.com
Publications 2007 | NQS Group
http://www.nqs-group.com/publications-2007
1) K Rogdakis, M. Bescond, E. Bano and K. Zekentes, Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes, Nanotechnology. 475715 (2007). http:/ dx.doi.org/10.1088/0957-4484/18/47/475715. 2) A Martinez, M. Bescond, J. R. Barker, A. Svizhenkov, A. Anantram, C. Millar, A. Asenov, Self-consistent full 3D real-space NEGF simulator for studying of non-perturbative effects in nano-MOSFET, IEEE Trans. Electron Dev. Http:/ dx.doi.org/10.1088/0957-4484/18/25/255201.
One-shot current conserving inelastic transport modeling | NQS Group
http://www.nqs-group.com/transistors/one-shot-current-conserving-inelastic-quantum-transport-modeling
One-shot current conserving inelastic transport modeling. Illustration of the current degradation in double-gate MOSFETs resulting from electron-phonon interactions. In this case the one-shot LOA AC method perfectly reproduces the SCBA results [2]. 1) H Mera, M. Lannoo, C. Li, N. Cavassilas, M. Bescond,. Inelastic scattering in nanoscale devices one-shot current-conserving lowest order approximation,. Phys Rev. B (rapid communications) 86, 161404 (2012). DOI: 10.1103/PhysRevB.86.161404.
News 2013 | NQS Group
http://www.nqs-group.com/news-2013
Quantum Transport Modeling of Nano-Transistors. Realistic Modeling of contacts. Laboratory, group: IM2NP, Nanodevice Quantum simulation Group. Duration: 1 year 1 year. Starting date: March 2014. 1] H Mera, M. Lannoo, N. Cavassilas, M. Bescond, Nanoscale device modeling using a conserving analytic continuation technique, Phys. Rev. B. 4] M Bescond, C. Li, H. Mera, N. Cavassilas, and M. Lannoo, Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation...Computational...
Transistors | NQS Group
http://www.nqs-group.com/category/transistors
Modeling of p-type MOS transistors. Fig 1: Illustration of the multi-band effect on the local density of states and transmission coefficient in a Si p-type double-gate MOSFET whose transport direction is along [100]. VDS = -0.4V and VG = 0V. For sake of clarity the bandstructures and potentials are represented in terms of hole energy [1,2]. Complementary metal oxide semi-conductor technology. One-shot current conserving inelastic transport modeling. Enhanced thermopower in the transient regime.
Photovoltaics | NQS Group
http://www.nqs-group.com/category/photovoltaics
Quantum PV effect in hetero-nanowire junctions. Following that idea of combining one-dimensional and zero-dimensional nanostructures, like in photonics devices, we investigated the photovoltaic response of a mesoscopic junction in which the light is absorbed in a quantum dot laterally connected to two quantum wires on each side Fig. 1. The transport and optical properties have then been determined using a powerful. Quantum modeling of thin film solar cells. Enhanced thermopower in the transient regime.
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NQS-group Home Nanodevice Quantm Simulations
One-shot current conserving inelastic transport modeling. Fig1: Illustration of the current degradation in double-gate MOSFETs resulting from electron-phonon interactions. In this case the one-shot LOA AC method perfectly reproduces the SCBA results [2]. We describe a lowest-order approximation (LOA) to the nonequilibrium Green’s function in the presence of interactions, and generally address how one can build Phi-derivable one-shot approximations that satisfy the. Modeling of p-type MOS transistors.
Сертификат соответствия ГОСТ Р, Таможенного Союза (ТР ТС), сертификация продукции и оборудования, сертификация ИСО 9001-2011 - Национальные Стандарты Качества
Сертификат технического регламента таможенного союза. Декларация технического регламента таможенного союза (ТР ТС). Сертификат соответствия ГОСТ Р. Сертификат соответствия техническому регламенту. Сертификация и декларирование продукции на соответствие требованиям пожарной безопасности МЧС РФ. Свидетельство об утверждении типа средств измерений ( метрологический сертификат). Свидетельство о Безопасности Конструкции Транспортных Средств (СБКТС). Разрешение Ростехнадзора на применение (отменено). Автономна...
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Pilates y control postural. Control de peso y porcentaje graso. Recuperación de lesiones y Reeducación Funcional. Entrenamiento de la mujer. Preparación de oposiciones y otras pruebas físicas. Pilates y control postural. Control de peso y porcentaje graso. Recuperación de lesiones y Reeducación Funcional. Entrenamiento de la mujer. Preparación de oposiciones y otras pruebas físicas. Con nuestro programa de fuerza podrás alcanzar tus objetivos a partir de un plan de trabajo conciso y específico. A través ...
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