sicsubstrate.com
SiC substrate: Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate
http://www.sicsubstrate.com/2014/11/growth-and-analysis-of-modulation-doped.html
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate. The growth of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate. The semi-insulating characteristic of GaN layer analyzed by PL measurement. Found in 1990,...
sicsubstrate.com
SiC substrate
http://www.sicsubstrate.com/index.html
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Structural and defects induced phenomena in γ-rays irradiated 6H-SiC. 8226;No formation of others SiC polytypes. 8226;The gamma rays irradiation has induced a slight surface amorphization. 8226;A re-crystallization at lower and higher doses is noticed. C and Si. The thermograv...
sicsubstrate.com
SiC substrate: 六月 2015
http://www.sicsubstrate.com/2015_06_01_archive.html
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Research on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) Si Surface Based on Abrasive Alumina (Al2O3). Keywords: Chemical mechanical polishing; SiC crystal substrate ;Material removal rate; polishing slurry. If you find them interesting, please visit us:.
sicsubstrate.com
SiC substrate: 十月 2014
http://www.sicsubstrate.com/2014_10_01_archive.html
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates. If you find them interesting, please visit us:. Or contact with us: powerwaymaterial@gmail.com. 标签: sic substrate. 订阅: 帖子 (Atom). Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (P...
sicsubstrate.com
SiC substrate: Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts
http://www.sicsubstrate.com/2015/07/atom-scale-covalent-electrochemical.html
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts. Controlled modification of epitaxial graphene is achieved by using diaryliodonium salts. The grafting density can be reproducibly tuned from 4 × 10.
ledepitaxialwafer.com
Led epitaxial Wafer: Wafer-level LED-SiP based mobile flash module and characterization
http://www.ledepitaxialwafer.com/2014/10/wafer-level-led-sip-based-mobile-flash.html
Sunday, October 12, 2014. Wafer-level LED-SiP based mobile flash module and characterization. If you find them interesting, please visit us:. Or contact with us: powerwaymaterial@gmail.com. Subscribe to: Post Comments (Atom). View my complete profile. Wafer-level LED-SiP based mobile flash module and . Simple template. Powered by Blogger.
sicsubstrate.com
SiC substrate: Ceramic substrates of β-SiC/SiAlON composite from preceramic polymers and Al–Si fillers
http://www.sicsubstrate.com/2014/12/ceramic-substrates-of-sicsialon.html
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Ceramic substrates of β-SiC/SiAlON composite from preceramic polymers and Al–Si fillers. SiAlON polytypoids were observed in all the samples and were identified by high resolution electron microscopy (HREM) in samples pyrolyzed at 1500 °C. 标签: sic substrate. 订阅: 帖子评论 (Atom).
ledepitaxialwafer.com
Led epitaxial Wafer: October 2014
http://www.ledepitaxialwafer.com/2014_10_01_archive.html
Sunday, October 12, 2014. Wafer-level LED-SiP based mobile flash module and characterization. If you find them interesting, please visit us:. Or contact with us: powerwaymaterial@gmail.com. Subscribe to: Posts (Atom). View my complete profile. Wafer-level LED-SiP based mobile flash module and . Simple template. Powered by Blogger.
sicsubstrate.com
SiC substrate: Structural and optical characterization of GaN heteroepitaxial films on SiC substrates
http://www.sicsubstrate.com/2014/10/structural-and-optical-characterization.html
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates. If you find them interesting, please visit us:. Or contact with us: powerwaymaterial@gmail.com. 标签: sic substrate. 订阅: 帖子评论 (Atom). Found in 1990,Xiamen Powerway Advanced Material Co., Ltd ...
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