Quantum Device Solutions offers molecular beam epitaxy (MBE) growth and device fabrication of arsenide/antimonide based III-V semiconductors. QDS operate a dual chamber Veeco GEN 3 MBE system...
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Gas Sensing Solutions Ltd
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QDS - Home | quantumdevicesolutions.com Reviews
https://quantumdevicesolutions.com
Quantum Device Solutions offers molecular beam epitaxy (MBE) growth and device fabrication of arsenide/antimonide based III-V semiconductors. QDS operate a dual chamber Veeco GEN 3 MBE system...
quantumdevicesolutions.com
QDS - Home
http://www.quantumdevicesolutions.com/index.html
Phone 44(0)141 579 3020. Molecular Beam Epitaxy III-V Semiconductor Materials Growth Capability. Quantum Device Solutions offers molecular beam epitaxy (MBE) growth and device fabrication of arsenide/antimonide based III-V semiconductors. QDS operate a dual chamber Veeco GEN 3 MBE system with 4" growth capability for development or production. The system is equipped with RHEED, RGA, Pyrometer and BandiT wafer temperature monitoring. AlInSb Mid IR LED. AlInSb Mid IR Photodiode. High Frequency Gunn Diodes.
Mid IR LED - QDS
http://www.quantumdevicesolutions.com/mid-ir-led.html
Phone 44(0)141 579 3020. Mid IR LED's and Photodiodes in the 3 micron to 5 micron range. Mid IR LED with tuned peak output. Typical 2.0V for 100mA drive current. The LED peak emission can be tuned across a broad spectral range by appropriate material selection. These examples show LED's with peak emissions at 3.4, 4.3 and 4.5 microns. Measured at 20C unless otherwise stated. This shows the typical performance of a 4.3micron LED. Drive voltage for 100mA. Far Field Radiation Pattern. 165mm x 1.45mm.
Quantum Dots - QDS
http://www.quantumdevicesolutions.com/quantum-dots.html
Phone 44(0)141 579 3020. Intermediate Band Solar Cells. With theoretical efficiencies of 63% Intermediate Band Solar Cells use quantum dots to absorb sub-bandgap photons which would otherwise be lost in a conventional solar cell. The Atomic Force Microscope Image shows 2.4ML InAs grown on AlGaAs after 20 Quantum dot layers. This structure has been incorporated in an Intermediate Band Solar Cell. GaAs/AlGaAs Quantum Wells on Ge Substrates. Multiple Quantum Well structure.
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Quantum Devices INC | Improving the quality in Life through the power in light.
Improving the quality in Life through the power in light. April 24, 2012. I received this e-mail from a potential customer who is trying to determine why his Encoder waveform doesn’t look right. His name has been changed to protect his identity. I have just come across your Web page on RPM calculation. Using an optical encoder and oscilloscope. Really enjoyed reading your articles. Look forward to hearing back from you soon. Eddie’s photos are below:. Connecting the scope ground to the incremental encode...
QDS - Home
Phone 44(0)141 579 3020. Molecular Beam Epitaxy III-V Semiconductor Materials Growth Capability. Quantum Device Solutions offers molecular beam epitaxy (MBE) growth and device fabrication of arsenide/antimonide based III-V semiconductors. QDS operate a dual chamber Veeco GEN 3 MBE system with 4" growth capability for development or production. The system is equipped with RHEED, RGA, Pyrometer and BandiT wafer temperature monitoring. AlInSb Mid IR LED. AlInSb Mid IR Photodiode. High Frequency Gunn Diodes.
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Quantum Development Group
You can still contact us using the information below. Cliffside Park, New Jersey 07010. Telephone: 201 941 9466. Facsimile: 201 941 0185.
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