The 2016 Silicon Nanoelectronics Workshop is a satellite workshop of the 2016 VLSI Symposia sponsored by the IEEE Electron Device Society. It will be held on June 12-13, 2016 at the Hilton Hawaiian Village in Honolulu, Hawaii USA. This will be the
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SNW 2016 | snw2016.epfl.ch Reviews
https://snw2016.epfl.ch
The 2016 Silicon Nanoelectronics Workshop is a satellite workshop of the 2016 VLSI Symposia sponsored by the IEEE Electron Device Society. It will be held on June 12-13, 2016 at the Hilton Hawaiian Village in Honolulu, Hawaii USA. This will be the
snw2016.epfl.ch
Travel Information
http://snw2016.epfl.ch/travel
Jump to search field. Travel information is available through web site of VLSI Symposia. Paper submission deadline: April 10, 2016. Notification of acceptance: April 30, 2016. Registration links are now active. Advance program information is now available. Paper submission is closed. Plenary Keynote and Invited Speakers. Adrian M. Ionescu. Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland. National Chiao Tung University (NCTU), Taiwan. Schung@cc.nctu.edu.tw. Top of the page.
SNW 2016
http://snw2016.epfl.ch/home
Jump to search field. IEEE SILICON NANOELECTRONICS WORKSHOP 2016. June 12-13, 2016. Nanometer-scale transistors, including those employing non-classical structures, novel channel and source/drain materials, or non-thermal injection mechanism. Junction and insulator materials and process technology for nanoelectronic devices. Techniques for fabrication of nanostructures, including nanometer scale patterning. Physics of nanoelectronic devices, e.g. quantum effects, non-equilibrium transport. Devices for 3D...
Committee
http://snw2016.epfl.ch/program_committee
Jump to search field. Yee-Chia Yeo (yeechia yeo@tsmc.com). Adrian M. Ionescu (adrian.ionescu@epfl.ch). Steve Chung (schung@cc.nctu.edu.tw). Poli Univ. Bucharest. Seoul Nat. Univ. Plenary Keynote and Invited Speakers. Top of the page. Updated 05.05.2016.
Sitemap
http://snw2016.epfl.ch/site/snw2016/sitemap
Jump to search field. Top of the page. Updated 01.05.2016.
Program
http://snw2016.epfl.ch/program
Jump to search field. Please click on the link below for the advance program. Paper submission deadline: April 10, 2016. Notification of acceptance: April 30, 2016. Registration links are now active. Advance program information is now available. Paper submission is closed. Plenary Keynote and Invited Speakers. Adrian M. Ionescu. Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland. National Chiao Tung University (NCTU), Taiwan. Schung@cc.nctu.edu.tw. Top of the page. Updated 23.05.2016.
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大阪大学大学院 工学研究科 生命先端工学専攻 物質生命工学コース 渡部研究室
http://www-asf.mls.eng.osaka-u.ac.jp/index.html
Course of Material and Life Science, Division of Advanced Science and Biotechnology. Graduate School of Engineering, Osaka University. 山田先生 GaN 表面の熱酸化におけるキャップ層の効果、熱酸化処理によるSiO2/GaN 界面でのGaOx 形成とMOS 界面特性向上. Chanthaphan研究員 Improvement of physical and electrical properties in SiC-MOSdevices using deposited insulators on barium-enhanced thermal oxides. 勝君(M2) 理想SiO2/SiC 界面の実現に向けた超高温 低酸素分圧酸化の検討. 冨田君(M1) Sb ドープアモルファスGe の局所溶融横方向液相エピタキシャル成長によるn 型Ge 細線の作製と評価. 渡邉君(M1) AlGaN/GaN MOS-HEMT 電気特性劣化のゲート絶縁膜成膜温度依存性の検証.
Watanabe Laboratory - Course of Material & Life Science, Division of Advanced Science and Biotechnology, Graduate School of Engineering, Osaka University
http://www-asf.mls.eng.osaka-u.ac.jp/en/index.html
Course of Material and Life Science, Division of Advanced Science and Biotechnology. Graduate School of Engineering, Osaka University. We will give 6 oral presentations and a poster presentation at the 77th Japan Society of Applied Physics (JSAP) Autumn Meeting. In TOKI MESSE/Nigara on 13-16 September 2016. Our research titles are as follows. Dr Yamada (Project Lecturer) GaN 表面の熱酸化におけるキャップ層の効果、熱酸化処理によるSiO2/GaN 界面でのGaOx 形成とMOS 界面特性向上. MrKatsu(M2) 理想SiO2/SiC 界面の実現に向けた超高温 低酸素分圧酸化の検討. In Honolulu, HI, on Jun...
お知らせ一覧 | 大阪大学大学院 工学研究科 生命先端工学専攻 物質生命工学コース 渡部研究室
http://www-asf.mls.eng.osaka-u.ac.jp/jp/news/index.html
Course of Material and Life Science, Division of Advanced Science and Biotechnology. Graduate School of Engineering, Osaka University. 山田先生 GaN 表面の熱酸化におけるキャップ層の効果、熱酸化処理によるSiO2/GaN 界面でのGaOx 形成とMOS 界面特性向上. Chanthaphan研究員 Improvement of physical and electrical properties in SiC-MOSdevices using deposited insulators on barium-enhanced thermal oxides. 勝君(M2) 理想SiO2/SiC 界面の実現に向けた超高温 低酸素分圧酸化の検討. 冨田君(M1) Sb ドープアモルファスGe の局所溶融横方向液相エピタキシャル成長によるn 型Ge 細線の作製と評価. 渡邉君(M1) AlGaN/GaN MOS-HEMT 電気特性劣化のゲート絶縁膜成膜温度依存性の検証.
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SNW 2016
Jump to search field. IEEE SILICON NANOELECTRONICS WORKSHOP 2016. June 12-13, 2016. Nanometer-scale transistors, including those employing non-classical structures, novel channel and source/drain materials, or non-thermal injection mechanism. Junction and insulator materials and process technology for nanoelectronic devices. Techniques for fabrication of nanostructures, including nanometer scale patterning. Physics of nanoelectronic devices, e.g. quantum effects, non-equilibrium transport. Devices for 3D...
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Your Average Sports Blog | SPOILER: This blog is anything but average. The sports part was spot on though.
Your Average Sports Blog. SPOILER: This blog is anything but average. The sports part was spot on though. It took me a significant amount of time to learn how, but coding was something I never thought I would need to learn or would have the opportunity to. To end my final post, I can say that this semester has blown by, but it’s been a great one and I hope to use the things I’ve learned in this class in my future endeavors. To keep up with me, follow me on Twitter: Skye Wallace’s Twitter. May 1, 2014.
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