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Gallium Nitride | www-galliumnitride.com Reviews

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Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic[4][5], high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing

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1 gallium nitride fet

2 gallium nitride properties

3 gallium nitride electronics

4 gallium nitride wafer

5 gallium nitride lattice constant

6 gallium nitride on silicon

7 gallium nitride nanowires

8 gallium nitride nanoparticles

9 gallium nitride mosfet

10 gan on silicon

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Gallium Nitride | www-galliumnitride.com Reviews

https://www-galliumnitride.com

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic[4][5], high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing