clarycon.com
Plasma Etch
http://www.clarycon.com/plasmaetch.html
Plasma Technology for Advanced Devices. Influence of Mask material in silicon gate etching. Resist mask, dielectric hardmask, carbon hardmask, gate oxide selectivity, reactive layer, carbon concentration on gate oxide, resist coverage, mask selectivity, mask charging, pre-doped gate stack. Sidewall passivation layer formation during gate etch. Anisotropy, sidewall analysis with XPS, mask materials, gas mixtures, oxygen flow, overetch. The selfclean chemistry concept. Chlorine chemistry, gas additives.
clarycon.com
News_Hynix
http://www.clarycon.com/news_hynix.html
Plasma Technology for Advanced Devices. Hynix discloses a product roadmap to mass produce NAND-based flash memory at the Sedex Korea 2005 Trade show. According to EE Times, the company will shortly launch its initial 70-nm parts, including 4-, 8-, and 16-Gbit parts. Hynix plans to sample its 16-Gbit NAND device in November, with production slated for sometime next year. Source:. Hynix ships the first commercial 4 and 8 Mbit FeRAM samples. The desgin can be expanded to 64 Mbit.
clarycon.com
Ion Ion Plasma (2)
http://www.clarycon.com/ionionplasma(2).html
Plasma Technology for Advanced Devices. Ion–ion plasmas are plasmas in which the negative charges are negative ions instead of electrons. Ion–ion plasmas may form in the (temporal) afterglow of pulsed discharges in electronegative gases. Ion–ion plasmas may also form in a flowing plasma, sustained by a continuous wave power source. Far enough downstream of the plasma generation zone, the electron concentration can decay substantially to form an ion–ion plasma. The Debye length in an ion–ion plasma ...
clarycon.com
Clarycon Flash News
http://www.clarycon.com/claryconflashnew.html
Plasma Technology for Advanced Devices. Toshiba announces that is has started mass production of NAND flash memories using a 24 nm CMOS manufacturing process technology. The chip represents the smallest geometry and the highest density in NAND flash, the company says. The technology has been applied to a 2-bit per cell 64-Gbit memory. The company also plans to offer a 32-Gbit NAND flash memory and 3-bit per cell memory based on the process technology. Research analyst Shaw Wu claims in news reports that ...
clarycon.com
Porous Low k
http://www.clarycon.com/porouslowk.html
Plasma Technology for Advanced Devices. Barrier to faster integrated circuits may be mere speed bump, scientists say. Source: American Institute of Physics.
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