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porous, optical characterisation, electrochemical etching, nanostructuring | porous-35.com Reviews
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Fabrication and optical characterisation of porous structures <br /
porous-35.com
Applications of Porous Compounds
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Applications of Porous III-V Compounds. Porous III-V Semiconductors by I. Tiginyanu, S. Langa, H. Föll and V. Ursachi. 121 N-type macropores in Si. 122 P-type macropores in Si. 21 The basics of Solids and Solutions. 22 The Schottky Barrier. 23 Solid-electrolyte interface models. 24 Influence of Redox Couples on the Fermi Energy. 251 Space Charge Layer in Semiconductors. 252 Helmholtz and Gouy Layers in Electrolyte Solutions. 253 Electrochemical Cells and Potentiostats. 31 Why Porous III-Vs. Integrated Wa...
Porous III-Vs, porous 35
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Porous III-V Semiconductors by I. Tiginyanu, S. Langa, H. Föll and V. Ursachi. 121 N-type macropores in Si. 122 P-type macropores in Si. 21 The basics of Solids and Solutions. 22 The Schottky Barrier. 23 Solid-electrolyte interface models. 24 Influence of Redox Couples on the Fermi Energy. 251 Space Charge Layer in Semiconductors. 252 Helmholtz and Gouy Layers in Electrolyte Solutions. 253 Electrochemical Cells and Potentiostats. 31 Why Porous III-Vs. 321 Anisotropy of III-Vs. 325 CB-Model and III-Vs.
Optical properties, porous structures
http://www.porous-35.com/optical-properties-.html
Optical properties of porous III-V structures. Porous III-V Semiconductors by I. Tiginyanu, S. Langa, H. Föll and V. Ursachi. 121 N-type macropores in Si. 122 P-type macropores in Si. 21 The basics of Solids and Solutions. 22 The Schottky Barrier. 23 Solid-electrolyte interface models. 24 Influence of Redox Couples on the Fermi Energy. 251 Space Charge Layer in Semiconductors. 252 Helmholtz and Gouy Layers in Electrolyte Solutions. 253 Electrochemical Cells and Potentiostats. 31 Why Porous III-Vs. 44 Pho...
porous, optical characterisation, electrochemical etching, nanostructuring
http://www.porous-35.com/index.html
By ussing electrochemical etching as a nanostructuring technique. " by ussing electrochemical etching as a nanostructuring technique. ". Porous III-V Semiconductors: online book. Fabrication and optical characterisation of porous structures. By ussing electrochemical etching as a nanostructuring technique. 121 N-type macropores in Si. 122 P-type macropores in Si. 21 The basics of Solids and Solutions. 22 The Schottky Barrier. 23 Solid-electrolyte interface models. 251 Space Charge Layer in Semiconductors.
Basics notions about solids
http://www.porous-35.com/electrochemistry-semiconductors-3.html
Basics notions about solids are nevessary." basics notions about solids are nevessary.". Basics notions about solids. In order to understand the electrochemistry of semiconductors some. Basics notions about solids are nevessary. 121 N-type macropores in Si. 122 P-type macropores in Si. 21 The basics of Solids and Solutions. 22 The Schottky Barrier. 23 Solid-electrolyte interface models. 24 Influence of Redox Couples on the Fermi Energy. 251 Space Charge Layer in Semiconductors. 31 Why Porous III-Vs.
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porous, optical characterisation, electrochemical etching, nanostructuring
By ussing electrochemical etching as a nanostructuring technique. " by ussing electrochemical etching as a nanostructuring technique. ". Porous III-V Semiconductors: online book. Fabrication and optical characterisation of porous structures. By ussing electrochemical etching as a nanostructuring technique. 121 N-type macropores in Si. 122 P-type macropores in Si. 21 The basics of Solids and Solutions. 22 The Schottky Barrier. 23 Solid-electrolyte interface models. 251 Space Charge Layer in Semiconductors.
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