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STR Group - Modeling of crystal growth and devices

STR Group provides consulting and software for modeling of crystal growth and devices. Our area of expertise includes crystal growth from melt (Czochralski, Cz growth, Bridgman), epitaxy (CVD, MOCVD, CHVPE, HVPE), PVT growth, growth by Siemens process, MBE, and modeling of semiconductor devices

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STR Group, Ltd.

STR Group, Ltd.

a/●●89

Saint●●●●●sburg , Saint Petersburg, 194156

RU

7.81●●●●4390
7.81●●●●6194
st●●●●●●●●●@str-soft.com

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STR Group, Ltd.

STR Group, Ltd.

a/●●89

Saint●●●●●sburg , Saint Petersburg, 194156

RU

7.81●●●●4390
7.81●●●●6194
st●●●●●●●●●@str-soft.com

View this contact

STR Group, Ltd.

STR Group, Ltd.

a/●●89

Saint●●●●●sburg , Saint Petersburg, 194156

RU

7.81●●●●4390
7.81●●●●6194
st●●●●●●●●●@str-soft.com

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STR Group - Modeling of crystal growth and devices | str-soft.com Reviews
<META>
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STR Group provides consulting and software for modeling of crystal growth and devices. Our area of expertise includes crystal growth from melt (Czochralski, Cz growth, Bridgman), epitaxy (CVD, MOCVD, CHVPE, HVPE), PVT growth, growth by Siemens process, MBE, and modeling of semiconductor devices
<META>
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1 semiconductor
2 crystal
3 growth
4 software
5 consulting
6 PVT growth
7 CVD
8 MOCVD
9 CHVPE
10 HVPE
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str group,consulting,learn,publications,events,distributors,simuled led&ld,cgsim melt,cvdsim epi,polysim siemens,virtual reactor,silense led&ld,specled led,ratro led,besst iii n sls,fetis hemts,pvcell,seles,streem,pvt growth,cvd of si based,cvd of iii vs
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STR Group - Modeling of crystal growth and devices | str-soft.com Reviews

https://str-soft.com

STR Group provides consulting and software for modeling of crystal growth and devices. Our area of expertise includes crystal growth from melt (Czochralski, Cz growth, Bridgman), epitaxy (CVD, MOCVD, CHVPE, HVPE), PVT growth, growth by Siemens process, MBE, and modeling of semiconductor devices

SUBDOMAINS

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STR downloads

You are welcome to browse our FREE downloadable materials. To download the materials below (free) you need to sign in. If you are not a registered user, please, register. CGSim (growth from melt). Presentation on 400 mm Si Cz growth. Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400 mm diameter Si Cz crystal growth, 17.39 MB, 19 Mar. 2007. Sapphire growth by the Kyropoulos technique. PolySim (polysilicon by Siemens process).

INTERNAL PAGES

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1

STR Group - Modeling of crystal growth and devices

http://www.str-soft.com/publications/index.htm

Modeling of Crystal Growth and Devices. Modeling of III-nitride Light-Emitting Diodes: Progress, Problems, and Perspectives. Proc of SPIE, vol. 7939 (2011) 79391C / DOI 10.1117/12.872842. Simulation of light-emitting diodes for new physics understanding and device design. K A Bulashevich, O. V. Khokhlev, I. Yu. Evstratov, S. Yu. Karpov. Proc of SPIE, vol. 8278 (2012). Comparison of Alternative Approaches to High-Power Thin-Film LED Chip Design. Download free Software DEMO Versions and Documentation.

2

SimuLED software for LED and laser diode design and optimization

http://www.str-soft.com/products/SpeCLED/index.htm

Modeling of Crystal Growth and Devices. Iodes, Software for 3D Modeling of Current Spreading and Temperature Distribution in LED chip. Fig 1 Basic design of 815×875 μm. Fig 2 Specification of the die geometry. Fig 3 Automatic generation of the computational grid. Characteristics relating the local normal current density j. With the p-n junction bias U. Applied to the active region. These characteristics may be either defined manually via special parameterized functions or imported from a set of exter...

3

SimuLED software for LED and laser diode design and optimization

http://www.str-soft.com/products/SimuLED/index.htm

Modeling of Crystal Growth and Devices. SimuLED—engineering tool for LED and laser diode design and optimization. Detailed presentation on software capabilities. Success stories (based on published results). On modular structure of SimuLED package. In brief, SimuLED capabilities include coupled simulation of:. Carrier transport in the heterostructure, read more. LED spectrum, read more. Current spreading/crowding, read more. Heat transfer, read more. Light extraction from the die, read more. Comparison o...

4

CGSim package for modeling and optimization of crystal growth from the melt

http://www.str-soft.com/products/CGSim/index.htm

Modeling of Crystal Growth and Devices. 100 mm CZ Si. 300 mm CZ Si. 400 mm CZ Si. VGF growth of GaAs. CGSim package for analysis and optimization of Cz, LEC, VCz, and Bridgman growth of semiconductor and semitransparent crystals. Your browser does not support the video tag. Czochralski Silicon Crystal Growth-May 2013.webm. Download printable brochure with application examples. Last updated September 26, 2012. Fig 1 CGSim package. CGSim can be effectively applied to the following practical problems:.

5

SimuLED software for LED and laser diode design and optimization

http://www.str-soft.com/products/BESST/index.htm

Modeling of Crystal Growth and Devices. 8212;package for simulation of optoelectronic devices based on group-III nitride superlattices. The BESST package allows calculating of individual SPSL properties as well as modeling of band diagram and carrier transport in a device structure consisted of a sequence of different p- and n-doped SPSL regions. The light emission spectra from such a device are also predicted. 2 BESST 2.0 options. The BESST package provides the following options:. The developed approach...

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会社情報|結晶成長やデバイスのシミュレーション【STRJapan株式会社】

http://www.str-soft.co.jp/company.html

本社 STR Group, Inc. 研究開発部門 Soft-Impact Ltd. St-Petersburg, Russia. STR US, Inc. Richmond, USA. STR GmbH Erlangen, Germany. STR Japan 株式会社( 横浜、日本 ). 主要な Sapphire, GaAs, GaP, GaN, AlN, SiC 基板製造メーカー. 主要な LED, レーザー、太陽電池製造メーカー. STR Japan 株式会社 ( STR Japan K.K. ). 電話番号 : 045-744-7511 ファックス番号 : 045-744-7521. 北林 佳紀 塚田 佳紀. Soft-Impact, Ltd(ロシア)、STR GmbH(ドイツ)、STR, Inc.(アメリカ) 現地法人を設立し、結晶成長とデバイスのコンサルティングを行う。 日本現地法人( STR Japan 株式会社 )を設立.

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實驗室簡介

http://ykuo.ncue.edu.tw/lab.htm

Http:/ ykuo.ncue.edu.tw/group.htm. Http:/ www.str-soft.com. Http:/ www.pitotech.com.tw. Http:/ www.str-soft.com. Http:/ www.pitotech.com.tw. Organic Light-Emitting Diode ,.

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Sponsors – ICDS 2017

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29th International Conference on Defects in Semiconductors, July 31 – Aug.4, 2017, Matsue, Japan. JAP Call for Papers. Plenary / Invited Speakers. Matsue Suigosai Fireworks Festival. J A Woollam Japan. GlobalWafers Japan Co., Ltd. Stanley Electric Co., Ltd. Fuji Electric Co., Ltd. Spintronics Research Network of Japan. EAG Inc. Nano Science Corporation. Other Sponsors Comming Soon…. Abstract Submission Deadline: March 15th, 2017 (extended). A WordPress Theme by @aicragellebasi.

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ICC6 International Congress on Ceramics

http://www.icc-6.com/industrial_exhibition.html

6th International Congress on Ceramics. August 21-25, 2016, Dresden, Germany. The ICC6 exhibition, held in conjunction with the congress, offers an excellent networking opportunity for international ceramists addressing both conventional and new processing technologies as well as applications in the field of advanced ceramics and adjacent sectors. Further equipment and services can be ordered in cooperation with our service partners. Rental elements and services. Electricity booth cleaning WiFi. BUCHI is...

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結晶成長やデバイスのシミュレーション【STRJapan株式会社】

様々な結晶成長やデバイスのシミュレーションを提供する STR (Semiconductor Technology Research) グループの日本現地法人である STR Japan 株式会社は、シミュレーションソフトウェア 受託解析 技術コンサルティングを提供いたします。 シリコン、窒化物 GaN, AlN 、SiC、III-V 族 GaAs, InP, GaP 、酸化物 Sapphire, CaF2, GGG, YAG)等. シリコン、窒化物 GaN, AlN, InGaN, AlGaN, AlInN 、SiC、III-V 族 GaAs, InP, GaP, AlGaP, InGaP, AlInGaP 等. 光学デバイス LED, レーザー、太陽電池 、電子デバイス HEMT 等. Virtual Reactor ver7.5がリリースされました。 12/30 金 1/5 木 は、弊社冬季休暇となりますので、予めご了承下さい。 日時 2016年11月 8日(火) 9日(水). Https:/ annex.jsap.or.jp/adps/scrm/index.html.

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STR Group - Modeling of crystal growth and devices

Modeling of Crystal Growth and Devices. 201504.29 STR Group has released the Crystal Growth Simulator CGSim 15.2. STR Group has released the Crystal Growth Simulator CGSim 15.2. A variety of new options is offered; in particular, chemical models for growth of SiC and GaN from solution have been recently implemented. New settings of the solver interface and graphical user interface provide users more flexibility. Solver stability is improved and a few minor bugs are fixed. STR Group has launched a new rel...

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